TY - GEN
T1 - System design of a HV/LV DC-DC converter with the evaluation of GaN and Si chip-embedding
AU - Eldistawy, Ahmed
AU - Heldwein, Marcelo Lobo
AU - Nils Muenzer, Mark
AU - Weiss, Peter
AU - Chan, Sam
AU - Ciammetti, Giampiero
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This work discusses the usage of two new power semiconductor technologies. One is Galium nitride (GaN) switches which belong to the wide-band gap devices. The second one is chip-embedding of silicon (Si) devices inside the PCB. This will be done by explaining the two new technologies and then providing a system design for a HV/LV DC-DC converter utilizing both these two technologies which could be used in automotive applications for the converter charging the auxiliary 12 V battery.
AB - This work discusses the usage of two new power semiconductor technologies. One is Galium nitride (GaN) switches which belong to the wide-band gap devices. The second one is chip-embedding of silicon (Si) devices inside the PCB. This will be done by explaining the two new technologies and then providing a system design for a HV/LV DC-DC converter utilizing both these two technologies which could be used in automotive applications for the converter charging the auxiliary 12 V battery.
UR - http://www.scopus.com/inward/record.url?scp=85192692209&partnerID=8YFLogxK
U2 - 10.1109/APEC48139.2024.10509393
DO - 10.1109/APEC48139.2024.10509393
M3 - Conference contribution
AN - SCOPUS:85192692209
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 1759
EP - 1766
BT - 2024 IEEE Applied Power Electronics Conference and Exposition, APEC 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024
Y2 - 25 February 2024 through 29 February 2024
ER -