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System CDM Modeling for High-Speed Interface Devices

  • Emanuele Groppo
  • , Harald Gossner
  • , Krzysztof Domanski
  • , Raj Dua
  • , Jian Gong
  • , Brett Carn
  • , Victor Zia
  • , Ralf Brederlow
  • Intel Deutschland GmbH
  • Intel Corporation

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Conventional simulation methods for Charged Device Model (CDM) peak current estimation, based on separate tester and IC lumped-element models, fail to capture fast transient phenomena at ultra-high-speed interfaces. A more comprehensive modeling approach, including on-die and package distributed parasitics, yields better predictive capabilities with respect to CDM qualification test results.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2024, EOS/ESD 2024
PublisherESD Association
ISBN (Electronic)9781585373536
DOIs
StatePublished - 2024
Event46th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2024 - Reno, United States
Duration: 16 Sep 202418 Sep 2024

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference46th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2024
Country/TerritoryUnited States
CityReno
Period16/09/2418/09/24

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