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Switching by Domain-Wall Automotion in Asymmetric Ferromagnetic Rings

  • Mohamad Assaad Mawass
  • , Kornel Richter
  • , Andre Bisig
  • , Robert M. Reeve
  • , Benjamin Krüger
  • , Markus Weigand
  • , Hermann Stoll
  • , Andrea Krone
  • , Florian Kronast
  • , Gisela Schütz
  • , Mathias Kläui
  • Johannes Gutenberg University
  • Max Planck Institute for Intelligent Systems
  • Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Spintronic applications based on magnetic domain-wall (DW) motion, such as magnetic data storage, sensors, and logic devices, require approaches to reliably manipulate the magnetization in nanowires. In this paper, we report the direct dynamic experimental visualization of reliable switching from the onion to the vortex state by DW automotion at zero field in asymmetric ferromagnetic rings using a uniaxial field pulse. Employing time-resolved x-ray microscopy, we demonstrate that depending on the detailed spin structure of the DWs and the size and geometry of the rings, the automotive propagation can be tailored during the DW relaxation from the higher-energy onion state to the energetically favored vortex state, where both DWs annihilate. Our measurements show DW automotion with an average velocity of about 60 m/s, which is a significant speed for spintronic devices. Such motion is mostly governed by local forces resulting from the geometry variations in the device. A closer study of the annihilation process via micromagnetic simulations reveals that a new vortex is nucleated in between the two initial walls. We demonstrate that the annihilation of DWs through automotion in our scheme always occurs with the detailed topological nature of the walls influencing only the DW dynamics on a local scale. The simulations show good quantitative agreement with our experimental results. These findings shed light on a robust and reliable switching process of the onion state in ferromagnetic rings, which paves the way for further optimization of these devices.

Original languageEnglish
Article number044009
JournalPhysical Review Applied
Volume7
Issue number4
DOIs
StatePublished - 18 Apr 2017
Externally publishedYes

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