Surface resistance of YBa2Cu3O7-δ thin films on silicon at THz frequencies

Ch Jaekel; H. G. Roskos; H. Kurz; W. Prusseit; H. Kinder

Surface resistance of YBa₂Cu₃O_7-δ thin films on silicon at THz frequencies

Ch Jaekel, H. G. Roskos, H. Kurz, W. Prusseit, H. Kinder

RWTH Aachen University

Research output: Contribution to conference › Paper › peer-review

Abstract

The microwave properties of YBa₂Cu₃O_7-δ on YSZ-buffered silicon were examined. The residual resistance Rres and the absolute value of the magnetic penetration depth were determined for films of different thickness below the critical 50-70 nm. The strong increase of Rres for films thicker than 30 nm and the weak dependence of λ suggests an increase of the density of microcracks at a thickness well below the established value of the critical thickness.

Original language	English
Pages	268-269
Number of pages	2
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth Duration: 28 Aug 1994 → 2 Sep 1994

Conference

Conference	Proceedings of the 5th European Quantum Electronics Conference
City	Amsterdam, Neth
Period	28/08/94 → 2/09/94

Cite this

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title = "Surface resistance of YBa2Cu3O7-δ thin films on silicon at THz frequencies",

abstract = "The microwave properties of YBa2Cu3O7-δ on YSZ-buffered silicon were examined. The residual resistance Rres and the absolute value of the magnetic penetration depth were determined for films of different thickness below the critical 50-70 nm. The strong increase of Rres for films thicker than 30 nm and the weak dependence of λ suggests an increase of the density of microcracks at a thickness well below the established value of the critical thickness.",

author = "Ch Jaekel and Roskos, {H. G.} and H. Kurz and W. Prusseit and H. Kinder",

year = "1994",

language = "English",

pages = "268--269",

note = "Proceedings of the 5th European Quantum Electronics Conference ; Conference date: 28-08-1994 Through 02-09-1994",

}

TY - CONF

T1 - Surface resistance of YBa2Cu3O7-δ thin films on silicon at THz frequencies

AU - Jaekel, Ch

AU - Roskos, H. G.

AU - Kurz, H.

AU - Prusseit, W.

AU - Kinder, H.

PY - 1994

Y1 - 1994

N2 - The microwave properties of YBa2Cu3O7-δ on YSZ-buffered silicon were examined. The residual resistance Rres and the absolute value of the magnetic penetration depth were determined for films of different thickness below the critical 50-70 nm. The strong increase of Rres for films thicker than 30 nm and the weak dependence of λ suggests an increase of the density of microcracks at a thickness well below the established value of the critical thickness.

AB - The microwave properties of YBa2Cu3O7-δ on YSZ-buffered silicon were examined. The residual resistance Rres and the absolute value of the magnetic penetration depth were determined for films of different thickness below the critical 50-70 nm. The strong increase of Rres for films thicker than 30 nm and the weak dependence of λ suggests an increase of the density of microcracks at a thickness well below the established value of the critical thickness.

UR - http://www.scopus.com/inward/record.url?scp=0028584537&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0028584537

SP - 268

EP - 269

T2 - Proceedings of the 5th European Quantum Electronics Conference

Y2 - 28 August 1994 through 2 September 1994

ER -

Surface resistance of YBa₂Cu₃O_7-δ thin films on silicon at THz frequencies

Abstract

Conference

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