Surface resistance and penetration depth of YBa2Cu 3O7-δ thin films on silicon at ultrahigh frequencies

Christian Jaekel; Christian Waschke; Hartmut G. Roskos; Heinrich Kurz; Werner Prusseit; Helmut Kinder

doi:10.1063/1.111267

Surface resistance and penetration depth of YBa₂Cu ₃O_7-δ thin films on silicon at ultrahigh frequencies

Christian Jaekel, Christian Waschke, Hartmut G. Roskos, Heinrich Kurz, Werner Prusseit, Helmut Kinder

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The surface resistance R_s and the absolute value of the magnetic penetration depth λ of ultrathin YBa₂Cu₃O _7-δ films on silicon are determined by THz-pulse transmission experiments. We find a minimal value of R_s for a film thickness of about 30 nm. The increase of R_s with film thickness above 30 nm reveals an increase of the density of weak links possibly associated with the formation of microfractures even below the critical film thickness of 50-70 nm.

Original language	English
Pages (from-to)	3326-3328
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	24
DOIs	https://doi.org/10.1063/1.111267
State	Published - 1994

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abstract = "The surface resistance Rs and the absolute value of the magnetic penetration depth λ of ultrathin YBa2Cu3O 7-δ films on silicon are determined by THz-pulse transmission experiments. We find a minimal value of Rs for a film thickness of about 30 nm. The increase of Rs with film thickness above 30 nm reveals an increase of the density of weak links possibly associated with the formation of microfractures even below the critical film thickness of 50-70 nm.",

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AU - Jaekel, Christian

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AU - Kurz, Heinrich

AU - Prusseit, Werner

AU - Kinder, Helmut

PY - 1994

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AB - The surface resistance Rs and the absolute value of the magnetic penetration depth λ of ultrathin YBa2Cu3O 7-δ films on silicon are determined by THz-pulse transmission experiments. We find a minimal value of Rs for a film thickness of about 30 nm. The increase of Rs with film thickness above 30 nm reveals an increase of the density of weak links possibly associated with the formation of microfractures even below the critical film thickness of 50-70 nm.

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Surface resistance and penetration depth of YBa₂Cu ₃O_7-δ thin films on silicon at ultrahigh frequencies

Abstract

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