SURFACE BARRIER FORMATION ON (110) GaAs STUDIED WITH RAMAN SPECTROSCOPY.

F. Schaeffler; H. Brugger; G. Abstreiter

SURFACE BARRIER FORMATION ON (110) GaAs STUDIED WITH RAMAN SPECTROSCOPY.

F. Schaeffler
, H. Brugger
, G. Abstreiter

TUM Emeriti of Excellence

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The formation of Schottky barriers and heterostructures at semiconductor surfaces has received considerable attention by the importance of surface and interface properties for electronic and electro-optic solid state devices. We report on the band bending behavior close to the (110) surface of n-GaAs single crystals cleaved in ultrahigh vacuum during the formation of semiconductor/metal and semiconductor/semiconductor interfaces. The measurements have been performed 'in situ' by means of electric field induced Raman scattering.

Original language	English
Title of host publication	Unknown Host Publication Title
Editors	James D. Chadi, Walter A. Harrison
Publisher	Springer Verlag
Pages	205-208
Number of pages	4
ISBN (Print)	0387961089
State	Published - 1985

Cite this

@inproceedings{ebe1c18b76a2430dbf848122c234035c,

title = "SURFACE BARRIER FORMATION ON (110) GaAs STUDIED WITH RAMAN SPECTROSCOPY.",

abstract = "The formation of Schottky barriers and heterostructures at semiconductor surfaces has received considerable attention by the importance of surface and interface properties for electronic and electro-optic solid state devices. We report on the band bending behavior close to the (110) surface of n-GaAs single crystals cleaved in ultrahigh vacuum during the formation of semiconductor/metal and semiconductor/semiconductor interfaces. The measurements have been performed 'in situ' by means of electric field induced Raman scattering.",

author = "F. Schaeffler and H. Brugger and G. Abstreiter",

year = "1985",

language = "English",

isbn = "0387961089",

publisher = "Springer Verlag",

pages = "205--208",

editor = "Chadi, \{James D.\} and Harrison, \{Walter A.\}",

booktitle = "Unknown Host Publication Title",

}

TY - GEN

T1 - SURFACE BARRIER FORMATION ON (110) GaAs STUDIED WITH RAMAN SPECTROSCOPY.

AU - Schaeffler, F.

AU - Brugger, H.

AU - Abstreiter, G.

PY - 1985

Y1 - 1985

N2 - The formation of Schottky barriers and heterostructures at semiconductor surfaces has received considerable attention by the importance of surface and interface properties for electronic and electro-optic solid state devices. We report on the band bending behavior close to the (110) surface of n-GaAs single crystals cleaved in ultrahigh vacuum during the formation of semiconductor/metal and semiconductor/semiconductor interfaces. The measurements have been performed 'in situ' by means of electric field induced Raman scattering.

AB - The formation of Schottky barriers and heterostructures at semiconductor surfaces has received considerable attention by the importance of surface and interface properties for electronic and electro-optic solid state devices. We report on the band bending behavior close to the (110) surface of n-GaAs single crystals cleaved in ultrahigh vacuum during the formation of semiconductor/metal and semiconductor/semiconductor interfaces. The measurements have been performed 'in situ' by means of electric field induced Raman scattering.

UR - https://www.scopus.com/pages/publications/0022204203

M3 - Conference contribution

AN - SCOPUS:0022204203

SN - 0387961089

SP - 205

EP - 208

BT - Unknown Host Publication Title

A2 - Chadi, James D.

A2 - Harrison, Walter A.

PB - Springer Verlag

ER -

SURFACE BARRIER FORMATION ON (110) GaAs STUDIED WITH RAMAN SPECTROSCOPY.

Abstract

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