Surface band bending on clean and oxidized (110)-GaAs studied by Raman spectroscopy

H. J. Stolz; G. Abstreiter

doi:10.1016/0038-1098(80)90128-3

Surface band bending on clean and oxidized (110)-GaAs studied by Raman spectroscopy

H. J. Stolz, G. Abstreiter

TUM Emeriti of Excellence

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We demonstrated that the measurement of a bulk phonon property, i.e. the resonantly excited symmetry forbidden LO-Raman intensity via its dependence on the surface electric field, is a comparatively easy, sensitive and high spatial resolution method to measure surface Fermi level positions in polar semiconductors as a function of e.g. cleavage conditions, oxygen exposure and doping.

Original language	English
Pages (from-to)	857-860
Number of pages	4
Journal	Solid State Communications
Volume	36
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(80)90128-3
State	Published - Dec 1980

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title = "Surface band bending on clean and oxidized (110)-GaAs studied by Raman spectroscopy",

abstract = "We demonstrated that the measurement of a bulk phonon property, i.e. the resonantly excited symmetry forbidden LO-Raman intensity via its dependence on the surface electric field, is a comparatively easy, sensitive and high spatial resolution method to measure surface Fermi level positions in polar semiconductors as a function of e.g. cleavage conditions, oxygen exposure and doping.",

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AU - Stolz, H. J.

AU - Abstreiter, G.

PY - 1980/12

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N2 - We demonstrated that the measurement of a bulk phonon property, i.e. the resonantly excited symmetry forbidden LO-Raman intensity via its dependence on the surface electric field, is a comparatively easy, sensitive and high spatial resolution method to measure surface Fermi level positions in polar semiconductors as a function of e.g. cleavage conditions, oxygen exposure and doping.

AB - We demonstrated that the measurement of a bulk phonon property, i.e. the resonantly excited symmetry forbidden LO-Raman intensity via its dependence on the surface electric field, is a comparatively easy, sensitive and high spatial resolution method to measure surface Fermi level positions in polar semiconductors as a function of e.g. cleavage conditions, oxygen exposure and doping.

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U2 - 10.1016/0038-1098(80)90128-3

DO - 10.1016/0038-1098(80)90128-3

M3 - Article

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SN - 0038-1098

VL - 36

SP - 857

EP - 860

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Surface band bending on clean and oxidized (110)-GaAs studied by Raman spectroscopy

Abstract

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