TY - GEN
T1 - Suppressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications
AU - Ni, Kai
AU - Prakash, Om
AU - Thomann, Simon
AU - Zhao, Zijian
AU - Deng, Shan
AU - Amrouch, Hussam
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Channel percolation in ferroelectric FET (FeFET) due to random spatial distribution of switched domains reduces the number of accessible threshold voltage (VTH) states, thus posing a profound reliability challenge when it comes to its usage as synaptic weight cell in neuromorphic applications. However, channel percolation is not universally present in FeFET and only exists when the channel regions underneath the domains have negligible interaction, e.g., when the domain is large enough. In this work, we performed a comprehensive evaluation on the parameters that could impact neighbor interaction, and hence channel percolation. We reveal that: i) weak gate control with thick ferroelectric (FE) layer enhances neighbor interaction and suppresses channel percolation; ii) higher temperature can also reduce percolation by weakening the gate control. These insights provide an important guideline for to engineer more reliable FeFET analog states.
AB - Channel percolation in ferroelectric FET (FeFET) due to random spatial distribution of switched domains reduces the number of accessible threshold voltage (VTH) states, thus posing a profound reliability challenge when it comes to its usage as synaptic weight cell in neuromorphic applications. However, channel percolation is not universally present in FeFET and only exists when the channel regions underneath the domains have negligible interaction, e.g., when the domain is large enough. In this work, we performed a comprehensive evaluation on the parameters that could impact neighbor interaction, and hence channel percolation. We reveal that: i) weak gate control with thick ferroelectric (FE) layer enhances neighbor interaction and suppresses channel percolation; ii) higher temperature can also reduce percolation by weakening the gate control. These insights provide an important guideline for to engineer more reliable FeFET analog states.
KW - Analog synapse
KW - FeFET
KW - Ferroelectric
KW - percolation
UR - http://www.scopus.com/inward/record.url?scp=85130709625&partnerID=8YFLogxK
U2 - 10.1109/IRPS48227.2022.9764521
DO - 10.1109/IRPS48227.2022.9764521
M3 - Conference contribution
AN - SCOPUS:85130709625
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 9C21-9C28
BT - 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Reliability Physics Symposium, IRPS 2022
Y2 - 27 March 2022 through 31 March 2022
ER -