Abstract
We report on the preparation of YBCO thin films by single target ion-beam deposition. A YBCO film deposited in-Situ on LaAI03, at a substrate temperature of 675°C and assisted by an atomic oxygen source, had a Tc of 80K. A YBCO film deposited in-Situ on LaAI03, at a substrate temperature of 750°C and assisted by a molecular oxygen source, had a Tcof 83K. A YBCO film deposited on a room temperature MgO substrate and followed by exsitu post annealing had a Tcof 80K. The properties of these films were studied through microscopy, stoichiometry, x-ray diffraction, Auger analysis and Tcmeasurements.
| Original language | English |
|---|---|
| Pages (from-to) | 3227-3230 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 27 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 1991 |
| Externally published | Yes |