Subharmonic structure of cyclotron resonance an inversion layer on Si

J. P. Kotthaus; G. Abstreiter; J. F. Koch

doi:10.1016/0038-1098(74)91132-6

Subharmonic structure of cyclotron resonance an inversion layer on Si

J. P. Kotthaus
, G. Abstreiter
, J. F. Koch

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO₂ interface.

Original language	English
Pages (from-to)	517-519
Number of pages	3
Journal	Solid State Communications
Volume	15
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(74)91132-6
State	Published - 1 Aug 1974

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title = "Subharmonic structure of cyclotron resonance an inversion layer on Si",

abstract = "At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.",

author = "Kotthaus, \{J. P.\} and G. Abstreiter and Koch, \{J. F.\}",

year = "1974",

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T1 - Subharmonic structure of cyclotron resonance an inversion layer on Si

AU - Kotthaus, J. P.

AU - Abstreiter, G.

AU - Koch, J. F.

PY - 1974/8/1

Y1 - 1974/8/1

N2 - At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.

AB - At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.

UR - https://www.scopus.com/pages/publications/0016092831

U2 - 10.1016/0038-1098(74)91132-6

DO - 10.1016/0038-1098(74)91132-6

M3 - Article

AN - SCOPUS:0016092831

SN - 0038-1098

VL - 15

SP - 517

EP - 519

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Subharmonic structure of cyclotron resonance an inversion layer on Si

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