Subharmonic structure of cyclotron resonance an inversion layer on Si

J. P. Kotthaus; G. Abstreiter; J. F. Koch

doi:10.1016/0038-1098(74)91132-6

Subharmonic structure of cyclotron resonance an inversion layer on Si

J. P. Kotthaus, G. Abstreiter, J. F. Koch

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO₂ interface.

Original language	English
Pages (from-to)	517-519
Number of pages	3
Journal	Solid State Communications
Volume	15
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(74)91132-6
State	Published - 1 Aug 1974

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title = "Subharmonic structure of cyclotron resonance an inversion layer on Si",

abstract = "At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.",

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AU - Kotthaus, J. P.

AU - Abstreiter, G.

AU - Koch, J. F.

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Y1 - 1974/8/1

N2 - At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.

AB - At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO2 interface.

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DO - 10.1016/0038-1098(74)91132-6

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SP - 517

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JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Subharmonic structure of cyclotron resonance an inversion layer on Si

Abstract

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