Sub-20 nm short channel carbon nanotube transistors

R. V. Seidel; A. P. Graham; J. Kretz; B. Rajasekharan; G. S. Duesberg; M. Liebau; E. Unger; F. Kreupl; W. Hoenlein

doi:10.1021/nl048312d

Sub-20 nm short channel carbon nanotube transistors

R. V. Seidel, A. P. Graham, J. Kretz, B. Rajasekharan, G. S. Duesberg, M. Liebau, E. Unger, F. Kreupl, W. Hoenlein

Infineon Technologies AG

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10⁶ are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700°C form the channels. Electron beam lithography and a combination of HSQ, calixarene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 μA for drain-source biases of only 0.4 V.

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	Nano Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1021/nl048312d
State	Published - Jan 2005
Externally published	Yes

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title = "Sub-20 nm short channel carbon nanotube transistors",

abstract = "Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >106 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700°C form the channels. Electron beam lithography and a combination of HSQ, calixarene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 μA for drain-source biases of only 0.4 V.",

author = "Seidel, {R. V.} and Graham, {A. P.} and J. Kretz and B. Rajasekharan and Duesberg, {G. S.} and M. Liebau and E. Unger and F. Kreupl and W. Hoenlein",

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doi = "10.1021/nl048312d",

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T1 - Sub-20 nm short channel carbon nanotube transistors

AU - Seidel, R. V.

AU - Graham, A. P.

AU - Kretz, J.

AU - Rajasekharan, B.

AU - Duesberg, G. S.

AU - Liebau, M.

AU - Unger, E.

AU - Kreupl, F.

AU - Hoenlein, W.

PY - 2005/1

Y1 - 2005/1

N2 - Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >106 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700°C form the channels. Electron beam lithography and a combination of HSQ, calixarene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 μA for drain-source biases of only 0.4 V.

AB - Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >106 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700°C form the channels. Electron beam lithography and a combination of HSQ, calixarene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 μA for drain-source biases of only 0.4 V.

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SN - 1530-6984

VL - 5

SP - 147

EP - 150

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Sub-20 nm short channel carbon nanotube transistors

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