Study of time-periodic avalanche breakdown occurring in VLD edge termination structures

U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

IGBT device destruction often occurs localized at the edge termination. Among various termination techniques, "variation of lateral doping" (VLD) is a promising candidate to increase the ruggedness of IGBT chips. We analyzed the time-dependent behavior of VLD edge termination during avalanche breakdown by numerical simulations demonstrating the advantage of this technique. Measurements on IGBT test devices with VLD edge termination are in agreement with the simulations.

Original languageEnglish
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages189-192
Number of pages4
ISBN (Print)9783211728604
DOIs
StatePublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: 25 Sep 200727 Sep 2007

Publication series

Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Conference

Conference12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Country/TerritoryAustria
CityVienna
Period25/09/0727/09/07

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