Study of structural defects limiting the luminescence of InGaN single quantum wells

Ana Cremades; J. Piqueras; M. Albrecht; M. Stutzmann; H. P. Strunk

doi:10.1016/S0921-5107(00)00648-6

Study of structural defects limiting the luminescence of InGaN single quantum wells

Ana Cremades, J. Piqueras, M. Albrecht, M. Stutzmann, H. P. Strunk

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.

Original language	English
Pages (from-to)	313-317
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	80
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00648-6
State	Published - 22 Mar 2001

Keywords

InGaN
Luminescence
Single quantum wells
Structural defects

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10.1016/S0921-5107(00)00648-6

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abstract = "InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.",

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AU - Cremades, Ana

AU - Piqueras, J.

AU - Albrecht, M.

AU - Stutzmann, M.

AU - Strunk, H. P.

PY - 2001/3/22

Y1 - 2001/3/22

N2 - InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.

AB - InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.

KW - InGaN

KW - Luminescence

KW - Single quantum wells

KW - Structural defects

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U2 - 10.1016/S0921-5107(00)00648-6

DO - 10.1016/S0921-5107(00)00648-6

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Study of structural defects limiting the luminescence of InGaN single quantum wells

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Keywords

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