Study of silicon photomultiplier performance in external electric fields

X. L. Sun, T. Tolba, G. F. Cao, P. Lv, L. J. Wen, A. Odian, F. Vachon, A. Alamre, J. B. Albert, G. Anton, I. J. Arnquist, I. Badhrees, P. S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. BrunnerA. Burenkov, L. Cao, W. R. Cen, C. Chambers, S. A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S. J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. Devoe, J. Dilling, Y. Y. Ding, M. J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E. V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M. J. Jewell, X. S. Jiang, A. Karelin, L. J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y. H. Lin, R. Maclellan, T. Michel, M. Moe, B. Mong, D. C. Moore, K. Murray, R. J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas Viii, A. K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T. I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J. L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S. X. Wu, W. H. Wu, Q. Xia, L. Yang, Y. R. Yen, O. Zeldovich, J. Zhao, Y. Zhou, T. Ziegler

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5 Scopus citations


We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

Original languageEnglish
Article numberT09006
JournalJournal of Instrumentation
Issue number9
StatePublished - 17 Sep 2018
Externally publishedYes


  • Cryogenic detectors
  • Double-beta decay detectors
  • Noble liquid detectors (scintillation, ionization, double-phase)
  • Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)


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