Study of pinholes and nanotubes in AllnGaN films by cathodoluminescence and atomic force microscopy

M. Herrera; A. Cremades; J. Piqueras; M. Stutzmann; O. Ambacher

doi:10.1063/1.1690454

Study of pinholes and nanotubes in AllnGaN films by cathodoluminescence and atomic force microscopy

M. Herrera, A. Cremades, J. Piqueras, M. Stutzmann, O. Ambacher

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Abstract

The formation of pinholes in the tensile and compressively strained AllnGaN films grown on Al₂O₃ substrates by plasma-induced molecular beam epitaxy was studied. The study was carried out by using cathodoluminescence (CL) in the scanning electron microscope (SEM) and atomic force microscopy (AFM). Nanotubes, pits and v-shaped pinholes were found in a tensile strained sample. The results from CL show a higher emission around the pits than in the V-shaped pin-holes, revealing a different defect distributions.

Original language	English
Pages (from-to)	5305-5310
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.1690454
State	Published - 15 May 2004

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abstract = "The formation of pinholes in the tensile and compressively strained AllnGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy was studied. The study was carried out by using cathodoluminescence (CL) in the scanning electron microscope (SEM) and atomic force microscopy (AFM). Nanotubes, pits and v-shaped pinholes were found in a tensile strained sample. The results from CL show a higher emission around the pits than in the V-shaped pin-holes, revealing a different defect distributions.",

author = "M. Herrera and A. Cremades and J. Piqueras and M. Stutzmann and O. Ambacher",

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T1 - Study of pinholes and nanotubes in AllnGaN films by cathodoluminescence and atomic force microscopy

AU - Herrera, M.

AU - Cremades, A.

AU - Piqueras, J.

AU - Stutzmann, M.

AU - Ambacher, O.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The formation of pinholes in the tensile and compressively strained AllnGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy was studied. The study was carried out by using cathodoluminescence (CL) in the scanning electron microscope (SEM) and atomic force microscopy (AFM). Nanotubes, pits and v-shaped pinholes were found in a tensile strained sample. The results from CL show a higher emission around the pits than in the V-shaped pin-holes, revealing a different defect distributions.

AB - The formation of pinholes in the tensile and compressively strained AllnGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy was studied. The study was carried out by using cathodoluminescence (CL) in the scanning electron microscope (SEM) and atomic force microscopy (AFM). Nanotubes, pits and v-shaped pinholes were found in a tensile strained sample. The results from CL show a higher emission around the pits than in the V-shaped pin-holes, revealing a different defect distributions.

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U2 - 10.1063/1.1690454

DO - 10.1063/1.1690454

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Study of pinholes and nanotubes in AllnGaN films by cathodoluminescence and atomic force microscopy

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