Structural and interface properties of an AlN diamond ultraviolet light emitting diode

C. R. Miskys; J. A. Garrido; M. Hermann; M. Eickhoff; C. E. Nebel; M. Stutzmann; G. Vogg

doi:10.1063/1.1811382

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, C. E. Nebel, M. Stutzmann, G. Vogg

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[10̄10] AlN^I∥(100)[011] diamond for the predominant AlN domain (type I) and (0001)[̄12̄10] AlN ^II∥(100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.

Original language	English
Pages (from-to)	3699-3701
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1811382
State	Published - 25 Oct 2004

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title = "Structural and interface properties of an AlN diamond ultraviolet light emitting diode",

abstract = "Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[1{\=0}10] AlNI∥(100)[011] diamond for the predominant AlN domain (type I) and (0001){\=[}1{\=2}10] AlN II∥(100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.",

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T1 - Structural and interface properties of an AlN diamond ultraviolet light emitting diode

AU - Miskys, C. R.

AU - Garrido, J. A.

AU - Hermann, M.

AU - Eickhoff, M.

AU - Nebel, C. E.

AU - Stutzmann, M.

AU - Vogg, G.

PY - 2004/10/25

Y1 - 2004/10/25

N2 - Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[10̄10] AlNI∥(100)[011] diamond for the predominant AlN domain (type I) and (0001)[̄12̄10] AlN II∥(100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.

AB - Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[10̄10] AlNI∥(100)[011] diamond for the predominant AlN domain (type I) and (0001)[̄12̄10] AlN II∥(100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.

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Structural and interface properties of an AlN diamond ultraviolet light emitting diode

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