Structural and electronic properties of ultrathin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange

Keyphrases

• Layer Thickness 100%
• Ultrathin 100%
• Electronic Properties 100%
• Structural Properties 100%
• Si Layer 100%
• Layer Exchange 100%
• Polycrystalline Si 100%
• Aluminum Toxicity 100%
• Annealing Temperature 66%
• Dynamic Properties 33%
• Exchange Processes 33%
• Process Dynamics 33%
• Crystallization 33%
• Annealing 33%
• Raman Spectroscopy 33%
• Polysilicon 33%
• P-type 33%
• Silicon Layer 33%
• Hole Concentration 33%
• Crystal Quality 33%
• Amorphous Si 33%
• Al Oxide 33%
• Nucleation Density 33%
• Cm(III) 33%

Material Science

• Silicon 100%
• Electronic Property 100%
• Annealing 100%
• Aluminum 100%
• Density 50%
• Nucleation 50%
• Raman Spectroscopy 50%
• Structural Dynamics 50%
• Oxide Compound 50%
• Hole Concentration 50%

Engineering

• Layer Thickness 100%
• Polycrystalline 100%
• Annealing Temperature 66%
• Process Dynamic 33%
• Silicon Layer 33%
• Crystalline Quality 33%
• Amorphous Oxide 33%
• Hole Concentration 33%
• Polysilicon 33%