Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

G. Krötz, W. Legner, G. Müller, H. W. Grueninger, L. Snith, B. Leese, A. Jones, S. Rushworth

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46 Scopus citations

Abstract

This paper presents the results of an in-depth investigation into the chemical vapour deposition (CVD) growth of β-SiC on Si from H3SiCH3 precursors. In agreement with previous work, we find an onset of CVD growth at substrate temperatures in the order of 750-800 °C. Higher temperatures lead to exponentially increasing growth rates until diffusion limitations set in at about 1000 °C. The highest quality films, with structural characteristics typical of single-crystal material, were deposited at about 1050°C. Substrate pretreatments, except for a pre-deposition HF dip, had surprisingly little influence on the crystal quality. Films deposited at substrate temperatures lower than 1000°C exhibited substantially broader IR absorption peaks and a higher degree of misorientation than those deposited at high temperature.

Original languageEnglish
Pages (from-to)154-159
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume29
Issue number1-3
DOIs
StatePublished - Jan 1995
Externally publishedYes

Keywords

  • Chemical vapour deposition
  • Epitaxy of thin films
  • Silicon carbide
  • X-ray diffraction

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