Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

A. Rosenauer; D. Van Dyck; D. Gerthsen; M. Arzberger; G. Böhm; G. Abstreiter

doi:10.1002/1521-3951(200103)224:1<213::AID-PSSB213>3.0.CO;2-F

Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, G. Abstreiter

Natural Sciences

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5 Scopus citations

Abstract

We report on the transmission electron microscopy characterization of InAs Stranski-Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530°C. Chemically sensitive reflections are used for the evaluation ot the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflects is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 ± 0.02 for T_G = 480°C and R = 0.82 ± 0.02 for T_G = 530°C.

Original language	English
Pages (from-to)	213-216
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	224
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200103)224:1<213::AID-PSSB213>3.0.CO;2-F
State	Published - Mar 2001

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title = "Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy",

abstract = "We report on the transmission electron microscopy characterization of InAs Stranski-Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530°C. Chemically sensitive reflections are used for the evaluation ot the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflects is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 ± 0.02 for TG = 480°C and R = 0.82 ± 0.02 for TG = 530°C.",

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T1 - Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

AU - Rosenauer, A.

AU - Van Dyck, D.

AU - Gerthsen, D.

AU - Arzberger, M.

AU - Böhm, G.

AU - Abstreiter, G.

PY - 2001/3

Y1 - 2001/3

N2 - We report on the transmission electron microscopy characterization of InAs Stranski-Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530°C. Chemically sensitive reflections are used for the evaluation ot the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflects is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 ± 0.02 for TG = 480°C and R = 0.82 ± 0.02 for TG = 530°C.

AB - We report on the transmission electron microscopy characterization of InAs Stranski-Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530°C. Chemically sensitive reflections are used for the evaluation ot the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflects is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 ± 0.02 for TG = 480°C and R = 0.82 ± 0.02 for TG = 530°C.

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Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

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