Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

R. Schuster; H. Hajak; M. Reinwald; W. Wegscheider; D. Schuh; M. Bichler; G. Abstreiter

doi:10.1016/j.physe.2003.11.268

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, G. Abstreiter

Natural Sciences

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In_0.2Al_0.8As stressor layers and the overgrown (110) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al_0.3Ga_0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.

Original language	English
Pages (from-to)	236-240
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.268
State	Published - Mar 2004
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Keywords

Cleaved edge overgrowth
Confinement energy
Micro-photoluminescence
Quantum wires
Strain

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10.1016/j.physe.2003.11.268

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title = "Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures",

abstract = "The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (110) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al0.3Ga0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.",

keywords = "Cleaved edge overgrowth, Confinement energy, Micro-photoluminescence, Quantum wires, Strain",

author = "R. Schuster and H. Hajak and M. Reinwald and W. Wegscheider and D. Schuh and M. Bichler and G. Abstreiter",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.268",

language = "English",

volume = "21",

pages = "236--240",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

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TY - JOUR

T1 - Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

AU - Schuster, R.

AU - Hajak, H.

AU - Reinwald, M.

AU - Wegscheider, W.

AU - Schuh, D.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2004/3

Y1 - 2004/3

N2 - The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (110) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al0.3Ga0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.

AB - The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (110) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al0.3Ga0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.

KW - Cleaved edge overgrowth

KW - Confinement energy

KW - Micro-photoluminescence

KW - Quantum wires

KW - Strain

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U2 - 10.1016/j.physe.2003.11.268

DO - 10.1016/j.physe.2003.11.268

M3 - Conference article

AN - SCOPUS:1642416267

SN - 1386-9477

VL - 21

SP - 236

EP - 240

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

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Keywords

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