Strong Coupling in All-Dielectric Intersubband Polaritonic Metasurfaces

Raktim Sarma, Nishant Nookala, Kevin James Reilly, Sheng Liu, Domenico De Ceglia, Luca Carletti, Michael D. Goldflam, Salvatore Campione, Keshab Sapkota, Huck Green, George T. Wang, John Klem, Michael B. Sinclair, Mikhail A. Belkin, Igal Brener

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures. Furthermore, along with demonstrating ISB polaritons with Rabi splitting as large as 10%, we also demonstrate the ability to tailor the strength of strong coupling by engineering either the semiconductor heterostructure or the photonic mode of the resonators. Unlike previous plasmonic-based works, our new all-dielectric metasurface approach to generate ISB polaritons is free from ohmic losses and has high optical damage thresholds, thereby making it ideal for creating novel and compact mid-infrared light sources based on nonlinear optics.

Original languageEnglish
Pages (from-to)367-374
Number of pages8
JournalNano Letters
Volume21
Issue number1
DOIs
StatePublished - 13 Jan 2021

Keywords

  • III-V semiconductors
  • dielectric metasurfaces
  • intersubband transitions
  • polaritons
  • strong light-matter interaction

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