Strained layer Si SiGe superlattices

E. Kasper, H. J. Herzog, H. Jorke, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


Si SiGe superlattices gained technical and scientific importance because of possible integration with conventional integrated circuits, strain induced properties, supercritical pseudomorphic growth, and predicted indirect/direct band gap transitions. We report here mainly on adjustment of strain in the superlattice and on strain influenced electronic band ordering. This results in type II band ordering of symmetrically strained superlattices, and two-dimensional electron gas formation in the wide gap material silicon.

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalSuperlattices and Microstructures
Issue number2
StatePublished - 1987


Dive into the research topics of 'Strained layer Si SiGe superlattices'. Together they form a unique fingerprint.

Cite this