Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices

G. Abstreiter; H. Brugger; T. Wolf; H. Jorke; H. J. Herzog

doi:10.1103/PhysRevLett.54.2441

Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices

G. Abstreiter
, H. Brugger
, T. Wolf
, H. Jorke
, H. J. Herzog

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

455 Scopus citations

Abstract

We report the observation of two-dimensional electron systems and enhanced mobilities in Si/Si0.5Ge0.5 strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.

Original language	English
Pages (from-to)	2441-2444
Number of pages	4
Journal	Physical Review Letters
Volume	54
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.54.2441
State	Published - 1985

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10.1103/PhysRevLett.54.2441

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@article{971ec34fea194429ad8a33aff9f58edd,

title = "Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices",

abstract = "We report the observation of two-dimensional electron systems and enhanced mobilities in Si/Si0.5Ge0.5 strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.",

author = "G. Abstreiter and H. Brugger and T. Wolf and H. Jorke and Herzog, \{H. J.\}",

year = "1985",

doi = "10.1103/PhysRevLett.54.2441",

language = "English",

volume = "54",

pages = "2441--2444",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "22",

}

TY - JOUR

T1 - Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices

AU - Abstreiter, G.

AU - Brugger, H.

AU - Wolf, T.

AU - Jorke, H.

AU - Herzog, H. J.

PY - 1985

Y1 - 1985

N2 - We report the observation of two-dimensional electron systems and enhanced mobilities in Si/Si0.5Ge0.5 strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.

AB - We report the observation of two-dimensional electron systems and enhanced mobilities in Si/Si0.5Ge0.5 strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.

UR - https://www.scopus.com/pages/publications/33144456500

U2 - 10.1103/PhysRevLett.54.2441

DO - 10.1103/PhysRevLett.54.2441

M3 - Article

AN - SCOPUS:33144456500

SN - 0031-9007

VL - 54

SP - 2441

EP - 2444

JO - Physical Review Letters

JF - Physical Review Letters

IS - 22

ER -

Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices

Abstract

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