Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices

G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog

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Abstract

We report the observation of two-dimensional electron systems and enhanced mobilities in Si/Si0.5Ge0.5 strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.

Original languageEnglish
Pages (from-to)2441-2444
Number of pages4
JournalPhysical Review Letters
Volume54
Issue number22
DOIs
StatePublished - 1985

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