Abstract
The presence of gain in self-assembled InAs/GaAs quantum dots was demonstrated. This was achieved using a combination of the variable stripe length method and time-resolved upconversion measurements.
| Original language | English |
|---|---|
| Pages | 40 |
| Number of pages | 1 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: 7 May 2000 → 12 May 2000 |
Conference
| Conference | Quantum Electronics and Laser Science Conference (QELS 2000) |
|---|---|
| City | San Francisco, CA, USA |
| Period | 7/05/00 → 12/05/00 |
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