TY - GEN
T1 - (S)TEM tomography of AlAs-GaAs coaxial nanowires
AU - Rebled, Josep M.
AU - Conesa-Boj, Sònia
AU - Arbiol, Jordi
AU - Peiró, Francesca
AU - Morante, Joan R.
AU - Heigoldt, Matthias
AU - Spirkoska, Danĉe
AU - Abstreiter, Gerhard
AU - Morral, Anna Fontcuberta I.
PY - 2009
Y1 - 2009
N2 - TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells synthesized on nanowires grown on different substrate orientations present different morphology, which induces changes on their photoluminescence properties.
AB - TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells synthesized on nanowires grown on different substrate orientations present different morphology, which induces changes on their photoluminescence properties.
UR - http://www.scopus.com/inward/record.url?scp=64949091756&partnerID=8YFLogxK
U2 - 10.1109/SCED.2009.4800431
DO - 10.1109/SCED.2009.4800431
M3 - Conference contribution
AN - SCOPUS:64949091756
SN - 9781424428397
T3 - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
SP - 65
EP - 68
BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
T2 - 2009 Spanish Conference on Electron Devices, CDE'09
Y2 - 11 February 2009 through 13 February 2009
ER -