Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs

Gilson I. Wirth; Roberto da Silva; Ralf Brederlow

doi:10.1109/TED.2006.888672

Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs

Gilson I. Wirth, Roberto da Silva, Ralf Brederlow

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.

Original language	English
Pages (from-to)	340-345
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	2
DOIs	https://doi.org/10.1109/TED.2006.888672
State	Published - Feb 2007
Externally published	Yes

Keywords

Analog circuits
Low-frequency (LF) noise
MOS transistors
Noise modeling
RF circuits
Variability

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10.1109/TED.2006.888672

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abstract = "This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.",

keywords = "Analog circuits, Low-frequency (LF) noise, MOS transistors, Noise modeling, RF circuits, Variability",

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AU - da Silva, Roberto

AU - Brederlow, Ralf

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AB - This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.

KW - Analog circuits

KW - Low-frequency (LF) noise

KW - MOS transistors

KW - Noise modeling

KW - RF circuits

KW - Variability

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JO - IEEE Transactions on Electron Devices

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ER -

Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs

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Keywords

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