Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

Gilson Wirth; Roberto Da Silva; Purushothaman Srinivasan; John Krick; Ralf Brederlow

doi:10.1109/IEDM.2009.5424240

Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

Gilson Wirth, Roberto Da Silva, Purushothaman Srinivasan, John Krick, Ralf Brederlow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Scopus citations

Abstract

A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	30.5.1-30.5.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424240
State	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424240

Cite this

Wirth, G., Da Silva, R., Srinivasan, P., Krick, J., & Brederlow, R. (2009). Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 30.5.1-30.5.4). Article 5424240 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424240

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title = "Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions",

abstract = "A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.",

author = "Gilson Wirth and {Da Silva}, Roberto and Purushothaman Srinivasan and John Krick and Ralf Brederlow",

year = "2009",

doi = "10.1109/IEDM.2009.5424240",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "30.5.1--30.5.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Wirth, G, Da Silva, R, Srinivasan, P, Krick, J & Brederlow, R 2009, Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424240, Technical Digest - International Electron Devices Meeting, IEDM, pp. 30.5.1-30.5.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424240

Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions. / Wirth, Gilson; Da Silva, Roberto; Srinivasan, Purushothaman et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 30.5.1-30.5.4 5424240 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Da Silva, Roberto

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PY - 2009

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AB - A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.

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Y2 - 7 December 2009 through 9 December 2009

ER -

Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

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