Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation

Gilson Wirth; Roberto Da Silva; Purushothaman Srinivasan; Ralf Brederlow

doi:10.1149/1.3372583

Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation

Gilson Wirth, Roberto Da Silva, Purushothaman Srinivasan, Ralf Brederlow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Experimental investigation and statistical modeling of the low-frequency noise behavior of MOSFETs under cyclo-stationary excitation was performed. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. It allows the derivation of an analytical formulation for the noise behavior. Monte Carlo simulations were also performed. Good agreement between experimental data, Monte Carlo simulations and model is found.

Original language	English
Title of host publication	Dielectrics for Nanosystems 4
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Publisher	Electrochemical Society Inc.
Pages	287-298
Number of pages	12
Edition	2
ISBN (Electronic)	9781607681427
ISBN (Print)	9781566777926
DOIs	https://doi.org/10.1149/1.3372583
State	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	2
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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10.1149/1.3372583

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Wirth, G., Da Silva, R., Srinivasan, P., & Brederlow, R. (2010). Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation. In Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 287-298). (ECS Transactions; Vol. 28, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3372583

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title = "Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation",

abstract = "Experimental investigation and statistical modeling of the low-frequency noise behavior of MOSFETs under cyclo-stationary excitation was performed. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. It allows the derivation of an analytical formulation for the noise behavior. Monte Carlo simulations were also performed. Good agreement between experimental data, Monte Carlo simulations and model is found.",

author = "Gilson Wirth and {Da Silva}, Roberto and Purushothaman Srinivasan and Ralf Brederlow",

year = "2010",

doi = "10.1149/1.3372583",

language = "English",

isbn = "9781566777926",

series = "ECS Transactions",

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Wirth, G, Da Silva, R, Srinivasan, P & Brederlow, R 2010, Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation. in Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 28, Electrochemical Society Inc., pp. 287-298. https://doi.org/10.1149/1.3372583

Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation. / Wirth, Gilson; Da Silva, Roberto; Srinivasan, Purushothaman et al.
Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. Electrochemical Society Inc., 2010. p. 287-298 (ECS Transactions; Vol. 28, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2010

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N2 - Experimental investigation and statistical modeling of the low-frequency noise behavior of MOSFETs under cyclo-stationary excitation was performed. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. It allows the derivation of an analytical formulation for the noise behavior. Monte Carlo simulations were also performed. Good agreement between experimental data, Monte Carlo simulations and model is found.

AB - Experimental investigation and statistical modeling of the low-frequency noise behavior of MOSFETs under cyclo-stationary excitation was performed. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. It allows the derivation of an analytical formulation for the noise behavior. Monte Carlo simulations were also performed. Good agreement between experimental data, Monte Carlo simulations and model is found.

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BT - Dielectrics for Nanosystems 4

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Statistical low-frequency noise model for MOSFETs under large signal cyclo-stationary excitation

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