Stability and band offsets of AIN/GaN heterostructures: Impact on device performance

J. A. Majewski, G. Zandler, P. Vogl

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We have performed first-principles local density calculations of several interfaces between GaN and AIN and studied their formation enthalpy and band offsets and the charge pileup at polar interfaces. Monte Carlo studies of the electrical characteristics of submicron HFET structures reveal that the pyro- and piezoelectric moments of the nitrides are a key property for designing and optimizing future devices.

Original languageEnglish
Pages (from-to)A90-A92
JournalSemiconductor Science and Technology
Volume13
Issue number8 SUPPL. A
DOIs
StatePublished - 1998
Externally publishedYes

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