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Spin splitting in GaAs quantum wire structures

  • Walter Schottky Institut

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Resonant Raman scattering is used to probe electronic excitations between the two spin-split conduction bands of GaAs quantum wire structures produced by a new method using a pulsed laser interference grating. We discuss the difference of the intrasubband single particle excitations spectra of quantum wires oriented along two perpendicular directions.

Original languageEnglish
Pages (from-to)929-932
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
StatePublished - 15 Jul 1998

Keywords

  • Electronic excitations
  • Inelastic light scattering
  • Low dimensional semiconductor structures

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