Spin splitting in GaAs quantum wire structures

E. Silveira; M. K. Kelly; C. E. Nebel; G. Böhm; G. Abstreiter; M. Stutzmann

doi:10.1016/S1386-9477(98)00190-8

Spin splitting in GaAs quantum wire structures

E. Silveira, M. K. Kelly, C. E. Nebel, G. Böhm, G. Abstreiter, M. Stutzmann

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Resonant Raman scattering is used to probe electronic excitations between the two spin-split conduction bands of GaAs quantum wire structures produced by a new method using a pulsed laser interference grating. We discuss the difference of the intrasubband single particle excitations spectra of quantum wires oriented along two perpendicular directions.

Original language	English
Pages (from-to)	929-932
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00190-8
State	Published - 15 Jul 1998

Keywords

Electronic excitations
Inelastic light scattering
Low dimensional semiconductor structures

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10.1016/S1386-9477(98)00190-8

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title = "Spin splitting in GaAs quantum wire structures",

abstract = "Resonant Raman scattering is used to probe electronic excitations between the two spin-split conduction bands of GaAs quantum wire structures produced by a new method using a pulsed laser interference grating. We discuss the difference of the intrasubband single particle excitations spectra of quantum wires oriented along two perpendicular directions.",

keywords = "Electronic excitations, Inelastic light scattering, Low dimensional semiconductor structures",

author = "E. Silveira and Kelly, {M. K.} and Nebel, {C. E.} and G. B{\"o}hm and G. Abstreiter and M. Stutzmann",

year = "1998",

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T1 - Spin splitting in GaAs quantum wire structures

AU - Silveira, E.

AU - Kelly, M. K.

AU - Nebel, C. E.

AU - Böhm, G.

AU - Abstreiter, G.

AU - Stutzmann, M.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Resonant Raman scattering is used to probe electronic excitations between the two spin-split conduction bands of GaAs quantum wire structures produced by a new method using a pulsed laser interference grating. We discuss the difference of the intrasubband single particle excitations spectra of quantum wires oriented along two perpendicular directions.

AB - Resonant Raman scattering is used to probe electronic excitations between the two spin-split conduction bands of GaAs quantum wire structures produced by a new method using a pulsed laser interference grating. We discuss the difference of the intrasubband single particle excitations spectra of quantum wires oriented along two perpendicular directions.

KW - Electronic excitations

KW - Inelastic light scattering

KW - Low dimensional semiconductor structures

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U2 - 10.1016/S1386-9477(98)00190-8

DO - 10.1016/S1386-9477(98)00190-8

M3 - Article

AN - SCOPUS:0000510952

SN - 1386-9477

VL - 2

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EP - 932

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Spin splitting in GaAs quantum wire structures

Abstract

Keywords

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