Spin interference and Fabry-Pérot resonances in ferromagnet-semiconductor-ferromagnet devices

T. Matsuyama, C. M. Hu, D. Grundler, G. Meier, D. Heitmann, U. Merkt

Research output: Contribution to journalArticlepeer-review


Magnetoconductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin-orbit interaction in the semiconductor as well as oblique modes in devices of finite widths and calculate conductance ratios ΔG/Ḡ between distinct geometries of the magnetizations in the source and drain electrodes. The appropriate spin-dependent boundary conditions yield magnetoconductance ratios ΔG/Ḡ of up to 1% and Fabry-Pérot type interferences.

Original languageEnglish
Pages (from-to)577-581
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
StatePublished - Mar 2002
Externally publishedYes


  • Ballistic transport
  • Spin filter
  • Spin injection
  • Two-dimensional electron gas


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