Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

H. Nakayama, M. Althammer, Y. T. Chen, K. Uchida, Y. Kajiwara, D. Kikuchi, T. Ohtani, S. Geprägs, M. Opel, S. Takahashi, R. Gross, G. E.W. Bauer, S. T.B. Goennenwein, E. Saitoh

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We report anisotropic magnetoresistance in Pt|Y3Fe 5O12 bilayers. In spite of Y3Fe 5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe 5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."

Original languageEnglish
Article number206601
JournalPhysical Review Letters
Issue number20
StatePublished - 13 May 2013


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