Spin-dependent transport in SiC and III-V semiconductor devices

A survey is given on the application of electrically detected magnetic resonance (EDMR) to compound semiconductors. In 6H-SiC light emitting diodes, a spin-dependent recombination current is observed with a resonance at g=.0028. In low-temperature grown GaAs (LT-GaAs), the antisite defect is found to resonantly quench the photoconductivity. Transition metal ions are seen as a resonant hopping process in GaAs:Mn. In both GaP:N green LEDs and bulk GaP:Mn, the recombination involving a sulfur-donor state is detected at g=1.996. Finally, the hopping in the effective-mass donor band as well as recombination between deep defects and Zn-acceptor related states is observed in GaN m/i/n/n⁺-LEDs.