Spin-dependent transport in Si thin-film transistors

G. Kawachi, C. F.O. Graeff, M. S. Brandt, M. Stutzmann

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Defects and carrier transport processes in silicon based thin-film transistors (TFTs) are investigated by spin-dependent transport (SDT). The resonance signal arising from less than 106 defects in the hydrogenated amorphous silicon (a-Si:H) TFT is detected with a sufficient signal-to-noise ratio. The leakage current mechanism in a-Si:H under high source-drain fields is identified by SDT as electron hopping via defect states located at the interface between undoped a-Si:H and the passivation silicon nitride layer. At temperatures below 100K, spin-dependent hopping of electrons in conduction band tail states is observed. The change of the dominant transport path from extended states conduction to variable range hopping with decreasing temperature is confirmed. SDT measurements on polycrystalline silicon (poly-Si) TFTs having silicon nitride and silicon dioxide as the gate dielectric films reveal differences in the defect structure in these devices. The overall results demonstrate that SDT is a powerful method to probe paramagnetic defects and carrier transport in TFTs.

Original languageEnglish
Pages (from-to)851-861
Number of pages11
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 31 Mar 19974 Apr 1997


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