Spin-dependent transport in amorphous silicon thin-film transistors

C. F.O. Graeff; G. Kawachi; M. S. Brandt; M. Stutzmann; M. J. Powell

doi:10.1016/0022-3093(96)00059-2

Spin-dependent transport in amorphous silicon thin-film transistors

C. F.O. Graeff, G. Kawachi, M. S. Brandt, M. Stutzmann, M. J. Powell

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 × 100 μm² is demonstrated.

Original language	English
Pages (from-to)	1117-1120
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(96)00059-2
State	Published - May 1996

Access to Document

10.1016/0022-3093(96)00059-2

Cite this

@article{8f6aeb99bda24838a282b5b19c160cff,

title = "Spin-dependent transport in amorphous silicon thin-film transistors",

abstract = "Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 × 100 μm2 is demonstrated.",

author = "Graeff, \{C. F.O.\} and G. Kawachi and Brandt, \{M. S.\} and M. Stutzmann and Powell, \{M. J.\}",

year = "1996",

month = may,

doi = "10.1016/0022-3093(96)00059-2",

language = "English",

volume = "198-200",

pages = "1117--1120",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 2",

}

TY - JOUR

T1 - Spin-dependent transport in amorphous silicon thin-film transistors

AU - Graeff, C. F.O.

AU - Kawachi, G.

AU - Brandt, M. S.

AU - Stutzmann, M.

AU - Powell, M. J.

PY - 1996/5

Y1 - 1996/5

N2 - Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 × 100 μm2 is demonstrated.

AB - Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 × 100 μm2 is demonstrated.

UR - https://www.scopus.com/pages/publications/17144447953

U2 - 10.1016/0022-3093(96)00059-2

DO - 10.1016/0022-3093(96)00059-2

M3 - Article

AN - SCOPUS:17144447953

SN - 0022-3093

VL - 198-200

SP - 1117

EP - 1120

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Spin-dependent transport in amorphous silicon thin-film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this