Spin-dependent transport in amorphous silicon nin-structures

Martin S. Brandt; Martin Stutzmann; Jan Kočka

doi:10.1016/0022-3093(93)91092-H

Spin-dependent transport in amorphous silicon nin-structures

Martin S. Brandt, Martin Stutzmann, Jan Kočka

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A spin-dependent component of the space-charge limited current in nin-structures is found at room temperature, which resonantly increases the SCLC at g = 2.0055. Trapping and reemission at dangling bonds are discussed as the possible origins of this resonance. The most dominant transport process, the hopping of electrons in the conduction band tail, cannot be observed due to the short spin-lattice relaxation time of this state at 300 K.

Original language	English
Pages (from-to)	693-696
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(93)91092-H
State	Published - 2 Dec 1993

Access to Document

10.1016/0022-3093(93)91092-H

Cite this

@article{f16690b3c7974c52a8e9d09d7917d4f2,

title = "Spin-dependent transport in amorphous silicon nin-structures",

abstract = "A spin-dependent component of the space-charge limited current in nin-structures is found at room temperature, which resonantly increases the SCLC at g = 2.0055. Trapping and reemission at dangling bonds are discussed as the possible origins of this resonance. The most dominant transport process, the hopping of electrons in the conduction band tail, cannot be observed due to the short spin-lattice relaxation time of this state at 300 K.",

author = "Brandt, {Martin S.} and Martin Stutzmann and Jan Ko{\v c}ka",

year = "1993",

month = dec,

day = "2",

doi = "10.1016/0022-3093(93)91092-H",

language = "English",

volume = "164-166",

pages = "693--696",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 2",

}

TY - JOUR

T1 - Spin-dependent transport in amorphous silicon nin-structures

AU - Brandt, Martin S.

AU - Stutzmann, Martin

AU - Kočka, Jan

PY - 1993/12/2

Y1 - 1993/12/2

N2 - A spin-dependent component of the space-charge limited current in nin-structures is found at room temperature, which resonantly increases the SCLC at g = 2.0055. Trapping and reemission at dangling bonds are discussed as the possible origins of this resonance. The most dominant transport process, the hopping of electrons in the conduction band tail, cannot be observed due to the short spin-lattice relaxation time of this state at 300 K.

AB - A spin-dependent component of the space-charge limited current in nin-structures is found at room temperature, which resonantly increases the SCLC at g = 2.0055. Trapping and reemission at dangling bonds are discussed as the possible origins of this resonance. The most dominant transport process, the hopping of electrons in the conduction band tail, cannot be observed due to the short spin-lattice relaxation time of this state at 300 K.

UR - http://www.scopus.com/inward/record.url?scp=17044454863&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(93)91092-H

DO - 10.1016/0022-3093(93)91092-H

M3 - Article

AN - SCOPUS:17044454863

SN - 0022-3093

VL - 164-166

SP - 693

EP - 696

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Spin-dependent transport in amorphous silicon nin-structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this