Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys

C. F.O. Graeff; M. S. Brandt; K. Eberhardt; I. Chambouleyron; M. Stutzmann

doi:10.1016/0022-3093(93)90481-C

Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys

C. F.O. Graeff, M. S. Brandt, K. Eberhardt, I. Chambouleyron, M. Stutzmann

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2 Scopus citations

Abstract

We use spin-dependent photo-conductivity (SDPC) to study the recombination process of photo-excited carriers in hydrogenated amorphous silicon germanium alloys (a-Si_χGe_1-χ:H). The incorporation of Ge is marked by a sudden change in the SDPC signal (-Δσ/σ) from (a-Si:H)-like to (a-Ge:H)-like. The Ge atoms create new states which dominate transport and recombination of photo-created free carriers. In particular, the SDPC lineshape analysis indicates that the a-Si:H conduction band tail is affected by alloying with small concentrations of germanium.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(93)90481-C
State	Published - 2 Dec 1993
Externally published	Yes

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title = "Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys",

abstract = "We use spin-dependent photo-conductivity (SDPC) to study the recombination process of photo-excited carriers in hydrogenated amorphous silicon germanium alloys (a-SiχGe1-χ:H). The incorporation of Ge is marked by a sudden change in the SDPC signal (-Δσ/σ) from (a-Si:H)-like to (a-Ge:H)-like. The Ge atoms create new states which dominate transport and recombination of photo-created free carriers. In particular, the SDPC lineshape analysis indicates that the a-Si:H conduction band tail is affected by alloying with small concentrations of germanium.",

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AU - Graeff, C. F.O.

AU - Brandt, M. S.

AU - Eberhardt, K.

AU - Chambouleyron, I.

AU - Stutzmann, M.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - We use spin-dependent photo-conductivity (SDPC) to study the recombination process of photo-excited carriers in hydrogenated amorphous silicon germanium alloys (a-SiχGe1-χ:H). The incorporation of Ge is marked by a sudden change in the SDPC signal (-Δσ/σ) from (a-Si:H)-like to (a-Ge:H)-like. The Ge atoms create new states which dominate transport and recombination of photo-created free carriers. In particular, the SDPC lineshape analysis indicates that the a-Si:H conduction band tail is affected by alloying with small concentrations of germanium.

AB - We use spin-dependent photo-conductivity (SDPC) to study the recombination process of photo-excited carriers in hydrogenated amorphous silicon germanium alloys (a-SiχGe1-χ:H). The incorporation of Ge is marked by a sudden change in the SDPC signal (-Δσ/σ) from (a-Si:H)-like to (a-Ge:H)-like. The Ge atoms create new states which dominate transport and recombination of photo-created free carriers. In particular, the SDPC lineshape analysis indicates that the a-Si:H conduction band tail is affected by alloying with small concentrations of germanium.

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EP - 18

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys

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