Spin-dependent electronic noise

M. S. Brandt; S. T.B. Goennenwein; M. Stutzmann

doi:10.1016/S1386-9477(01)00055-8

Spin-dependent electronic noise

M. S. Brandt
, S. T.B. Goennenwein
, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si:H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.

Original language	English
Pages (from-to)	67-70
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00055-8
State	Published - May 2001

Keywords

Electron spin resonance
Electronic noise
Noise-detected magnetic resonance
Spin-dependent tunneling

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10.1016/S1386-9477(01)00055-8

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title = "Spin-dependent electronic noise",

abstract = "The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si:H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.",

keywords = "Electron spin resonance, Electronic noise, Noise-detected magnetic resonance, Spin-dependent tunneling",

author = "Brandt, \{M. S.\} and Goennenwein, \{S. T.B.\} and M. Stutzmann",

year = "2001",

month = may,

doi = "10.1016/S1386-9477(01)00055-8",

language = "English",

volume = "10",

pages = "67--70",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Spin-dependent electronic noise

AU - Brandt, M. S.

AU - Goennenwein, S. T.B.

AU - Stutzmann, M.

PY - 2001/5

Y1 - 2001/5

N2 - The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si:H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.

AB - The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si:H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.

KW - Electron spin resonance

KW - Electronic noise

KW - Noise-detected magnetic resonance

KW - Spin-dependent tunneling

UR - https://www.scopus.com/pages/publications/0035335118

U2 - 10.1016/S1386-9477(01)00055-8

DO - 10.1016/S1386-9477(01)00055-8

M3 - Article

AN - SCOPUS:0035335118

SN - 1386-9477

VL - 10

SP - 67

EP - 70

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

ER -

Spin-dependent electronic noise

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Keywords

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