Spin-dependent effects in porous silicon

M. S. Brandt, M. Stutzmann

Research output: Contribution to journalArticlepeer-review

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Luminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the dominant paramagnetic defect, influencing both photoconductivity and photoluminescence. The assignment is supported by the observation of the corresponding 29Si hyperfine lines. A second hyperfine split pair is attributed to Si-F complexes formed during the etching process and remaining in the porous material.

Original languageEnglish
Pages (from-to)2569-2571
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1992
Externally publishedYes


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