Abstract
Additional results concerning spin-dependent transport (photoconductivity and dark conductivity) in undoped, doped, and compensated amorphous hydrogenated silicon are reported. Undoped samples show, in addition to the known dangling-bond and tail-state resonances, a broad line which is attributed to excitonic states and is demonstrated to be involved in light-induced degradation. In n-type and compensated samples, trapping and hopping in donor states is directly identified in spin-dependent conductivity. Implications of these results for recombination models are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 5184-5187 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 43 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |