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Spin-dependent capacitance of silicon field-effect transistors
M. S. Brandt
, R. T. Neuberger
,
M. Stutzmann
TUM Emeriti of Excellence
Walter Schottky Institut
Research output
:
Contribution to journal
›
Article
›
peer-review
13
Scopus citations
Overview
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Keyphrases
Field-effect Transistors
100%
Capacitance
100%
Spin-dependent
100%
Charge Carriers
33%
Space Charge Layer
33%
Magnetic Resonance
33%
Quantitative Model
33%
Resonance Condition
33%
Electron Spin Resonance
33%
Defect numbers
33%
Transition Metal Impurities
33%
Vertical Field Effect Transistor
33%
Chemistry
Silicon
100%
Field Effect
100%
Electron Spin
50%
Space Charge
50%
Magnetic Resonance
50%
Transition Metal
50%
Charge Carrier
50%
Material Science
Silicon
100%
Field Effect Transistor
100%
Capacitance
100%
Charge Carrier
50%
Transition Metal
50%
Electron Paramagnetic Resonance Spectroscopy
50%
Engineering
Field-Effect Transistor
100%
Crosstalk
50%
Channel Region
50%
Space Charge
50%
Charge Carrier
50%
Biochemistry, Genetics and Molecular Biology
Conductance
100%
Space Charge
100%