Spin-defect characteristics of single sulfur vacancies in monolayer MoS2

A. Hötger; T. Amit; J. Klein; K. Barthelmi; T. Pelini; A. Delhomme; S. Rey; M. Potemski; C. Faugeras; G. Cohen; D. Hernangómez-Pérez; T. Taniguchi; K. Watanabe; C. Kastl; J. J. Finley; S. Refaely-Abramson; A. W. Holleitner; A. V. Stier

doi:10.1038/s41699-023-00392-2

Spin-defect characteristics of single sulfur vacancies in monolayer MoS₂

A. Hötger, T. Amit, J. Klein, K. Barthelmi, T. Pelini, A. Delhomme, S. Rey, M. Potemski, C. Faugeras, G. Cohen, D. Hernangómez-Pérez, T. Taniguchi, K. Watanabe, C. Kastl, J. J. Finley, S. Refaely-Abramson, A. W. Holleitner, A. V. Stier

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS₂. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.

Original language	English
Article number	30
Journal	npj 2D Materials and Applications
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41699-023-00392-2
State	Published - Dec 2023

Access to Document

10.1038/s41699-023-00392-2

Cite this

Hötger, A., Amit, T., Klein, J., Barthelmi, K., Pelini, T., Delhomme, A., Rey, S., Potemski, M., Faugeras, C., Cohen, G., Hernangómez-Pérez, D., Taniguchi, T., Watanabe, K., Kastl, C., Finley, J. J., Refaely-Abramson, S., Holleitner, A. W., & Stier, A. V. (2023). Spin-defect characteristics of single sulfur vacancies in monolayer MoS₂. npj 2D Materials and Applications, 7(1), Article 30. https://doi.org/10.1038/s41699-023-00392-2

@article{1a7ba86d5ad24d738f95d07be7b978b0,

title = "Spin-defect characteristics of single sulfur vacancies in monolayer MoS2",

abstract = "Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.",

author = "A. H{\"o}tger and T. Amit and J. Klein and K. Barthelmi and T. Pelini and A. Delhomme and S. Rey and M. Potemski and C. Faugeras and G. Cohen and D. Hernang{\'o}mez-P{\'e}rez and T. Taniguchi and K. Watanabe and C. Kastl and Finley, {J. J.} and S. Refaely-Abramson and Holleitner, {A. W.} and Stier, {A. V.}",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s).",

year = "2023",

month = dec,

doi = "10.1038/s41699-023-00392-2",

language = "English",

volume = "7",

journal = "npj 2D Materials and Applications",

issn = "2397-7132",

publisher = "Nature Publishing Group",

number = "1",

}

Hötger, A, Amit, T, Klein, J, Barthelmi, K, Pelini, T, Delhomme, A, Rey, S, Potemski, M, Faugeras, C, Cohen, G, Hernangómez-Pérez, D, Taniguchi, T, Watanabe, K, Kastl, C, Finley, JJ, Refaely-Abramson, S, Holleitner, AW & Stier, AV 2023, 'Spin-defect characteristics of single sulfur vacancies in monolayer MoS₂', npj 2D Materials and Applications, vol. 7, no. 1, 30. https://doi.org/10.1038/s41699-023-00392-2

TY - JOUR

T1 - Spin-defect characteristics of single sulfur vacancies in monolayer MoS2

AU - Hötger, A.

AU - Amit, T.

AU - Klein, J.

AU - Barthelmi, K.

AU - Pelini, T.

AU - Delhomme, A.

AU - Rey, S.

AU - Potemski, M.

AU - Faugeras, C.

AU - Cohen, G.

AU - Hernangómez-Pérez, D.

AU - Taniguchi, T.

AU - Watanabe, K.

AU - Kastl, C.

AU - Finley, J. J.

AU - Refaely-Abramson, S.

AU - Holleitner, A. W.

AU - Stier, A. V.

PY - 2023/12

Y1 - 2023/12

N2 - Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.

AB - Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.

UR - http://www.scopus.com/inward/record.url?scp=85151334138&partnerID=8YFLogxK

U2 - 10.1038/s41699-023-00392-2

DO - 10.1038/s41699-023-00392-2

M3 - Article

AN - SCOPUS:85151334138

SN - 2397-7132

VL - 7

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

IS - 1

M1 - 30

ER -

Spin-defect characteristics of single sulfur vacancies in monolayer MoS₂

Abstract

Access to Document

Other files and links

Fingerprint

Cite this