Spin and level structure of positioned sulfur vacancies in MoS2 acting as quantum emitters

A. W. Holleitner

Spin and level structure of positioned sulfur vacancies in MoS₂ acting as quantum emitters

A. W. Holleitner

Chair of Nanotechnology and Nanomaterials

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the level structure of single vacancies in monolayer M0S₂ and WS₂ which are generated by the help of a helium ion microscope at a lateral accuracy of <10nm. The vacancies turn out to be quantum emitters in the near-infrared electromagnetic regime. Moreover, we demonstrate the absorption characteristics of the defect emitters measured by utilizing both a cavity enhanced detection scheme and a highly sensitive photocurrent tunneling spectroscopy.

Original language	English
Pages (from-to)	1217
Number of pages	1
Journal	International Conference on Metamaterials, Photonic Crystals and Plasmonics
State	Published - 2023
Event	13th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2023 - Paris, France Duration: 18 Jul 2023 → 21 Jul 2023

Cite this

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title = "Spin and level structure of positioned sulfur vacancies in MoS2 acting as quantum emitters",

abstract = "We report on the level structure of single vacancies in monolayer M0S2 and WS2 which are generated by the help of a helium ion microscope at a lateral accuracy of <10nm. The vacancies turn out to be quantum emitters in the near-infrared electromagnetic regime. Moreover, we demonstrate the absorption characteristics of the defect emitters measured by utilizing both a cavity enhanced detection scheme and a highly sensitive photocurrent tunneling spectroscopy.",

author = "Holleitner, \{A. W.\}",

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T1 - Spin and level structure of positioned sulfur vacancies in MoS2 acting as quantum emitters

AU - Holleitner, A. W.

PY - 2023

Y1 - 2023

N2 - We report on the level structure of single vacancies in monolayer M0S2 and WS2 which are generated by the help of a helium ion microscope at a lateral accuracy of <10nm. The vacancies turn out to be quantum emitters in the near-infrared electromagnetic regime. Moreover, we demonstrate the absorption characteristics of the defect emitters measured by utilizing both a cavity enhanced detection scheme and a highly sensitive photocurrent tunneling spectroscopy.

AB - We report on the level structure of single vacancies in monolayer M0S2 and WS2 which are generated by the help of a helium ion microscope at a lateral accuracy of <10nm. The vacancies turn out to be quantum emitters in the near-infrared electromagnetic regime. Moreover, we demonstrate the absorption characteristics of the defect emitters measured by utilizing both a cavity enhanced detection scheme and a highly sensitive photocurrent tunneling spectroscopy.

UR - https://www.scopus.com/pages/publications/85174581450

M3 - Conference article

AN - SCOPUS:85174581450

SN - 2429-1390

SP - 1217

JO - International Conference on Metamaterials, Photonic Crystals and Plasmonics

JF - International Conference on Metamaterials, Photonic Crystals and Plasmonics

T2 - 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2023

Y2 - 18 July 2023 through 21 July 2023

ER -

Spin and level structure of positioned sulfur vacancies in MoS₂ acting as quantum emitters

Abstract

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