Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells

C. Eisele; C. E. Nebel; M. Stutzmann

doi:10.1016/s0022-3093(99)00912-6

Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells

C. Eisele, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

The variation of electronic properties in an amorphous (a)-Si:H solar cell film deposited on a textured substrate is measured with sub-micrometer resolution (<500 nm). The experiments are performed using a high resolution laser beam induced current (LBIC) set-up where in addition to the photocurrent the light reflection is monitored. Fluctuations in photocurrent are correlated with surface structures of the cell. These variations are mainly caused by variations in the light intensity due to the lateral structure and lateral variation of the local electric field in the pin-junction. The results are discussed including resolution limits of the apparatus and atomic force image of the solar cell.

Original language	English
Pages (from-to)	1109-1113
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 B
DOIs	https://doi.org/10.1016/s0022-3093(99)00912-6
State	Published - 1 May 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23 Aug 1999 → 27 Aug 1999

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10.1016/s0022-3093(99)00912-6

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title = "Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells",

abstract = "The variation of electronic properties in an amorphous (a)-Si:H solar cell film deposited on a textured substrate is measured with sub-micrometer resolution (<500 nm). The experiments are performed using a high resolution laser beam induced current (LBIC) set-up where in addition to the photocurrent the light reflection is monitored. Fluctuations in photocurrent are correlated with surface structures of the cell. These variations are mainly caused by variations in the light intensity due to the lateral structure and lateral variation of the local electric field in the pin-junction. The results are discussed including resolution limits of the apparatus and atomic force image of the solar cell.",

author = "C. Eisele and Nebel, {C. E.} and M. Stutzmann",

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TY - JOUR

T1 - Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells

AU - Eisele, C.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - The variation of electronic properties in an amorphous (a)-Si:H solar cell film deposited on a textured substrate is measured with sub-micrometer resolution (<500 nm). The experiments are performed using a high resolution laser beam induced current (LBIC) set-up where in addition to the photocurrent the light reflection is monitored. Fluctuations in photocurrent are correlated with surface structures of the cell. These variations are mainly caused by variations in the light intensity due to the lateral structure and lateral variation of the local electric field in the pin-junction. The results are discussed including resolution limits of the apparatus and atomic force image of the solar cell.

AB - The variation of electronic properties in an amorphous (a)-Si:H solar cell film deposited on a textured substrate is measured with sub-micrometer resolution (<500 nm). The experiments are performed using a high resolution laser beam induced current (LBIC) set-up where in addition to the photocurrent the light reflection is monitored. Fluctuations in photocurrent are correlated with surface structures of the cell. These variations are mainly caused by variations in the light intensity due to the lateral structure and lateral variation of the local electric field in the pin-junction. The results are discussed including resolution limits of the apparatus and atomic force image of the solar cell.

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U2 - 10.1016/s0022-3093(99)00912-6

DO - 10.1016/s0022-3093(99)00912-6

M3 - Conference article

AN - SCOPUS:0006361062

SN - 0022-3093

VL - 266-269 B

SP - 1109

EP - 1113

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells

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