Spatially Resolved Diffusion of Aluminum in 4H-SiC during Postimplantation Annealing

Johanna Muting, Viktor Bobal, Marc Georg Willinger, Ali Baghi Zadeh, Steffen Reidt, Lasse Vines, Ulrike Grossner

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The fabrication of power semiconductor devices based on 4H-silicon carbide (SiC) typically includes doping by ion implantation and postimplantation annealing to activate the implanted dopants. The high-Temperature annealing process can initiate various diffusion mechanisms that alter the initial implantation profile in terms of spatial distribution and doping concentration. To investigate the diffusion of aluminum, the main p-dopant in 4H-SiC, samples are prepared by ion implantation and subsequent annealing at 1650 °C for 30 min. Secondary ion mass spectrometry (SIMS) measurements before and after the annealing process are performed to monitor the aluminum concentration. A significant amount of aluminum moves toward the surface and into the lateral direction, which is shown to be directly related to the implantation-induced point defects. Transmission electron microscopy (TEM) images support the discussion of diffusion mechanisms and their dependence on the defect type.

Original languageEnglish
Article number9184234
Pages (from-to)4360-4365
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 2020
Externally publishedYes


  • Annealing
  • defects
  • diffusion
  • ion implantation
  • silicon carbide (SiC)


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