Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

F. Hirler; R. Strenz; R. Kuchler; G. Abstreiter; G. Bohm; J. Smoliner; G. Trankle; G. Weimann

doi:10.1088/0268-1242/8/4/024

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

F. Hirler, R. Strenz, R. Kuchler, G. Abstreiter, G. Bohm, J. Smoliner, G. Trankle, G. Weimann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.

Original language	English
Article number	024
Pages (from-to)	617-621
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	8
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/8/4/024
State	Published - 1993

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title = "Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots",

abstract = "By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.",

author = "F. Hirler and R. Strenz and R. Kuchler and G. Abstreiter and G. Bohm and J. Smoliner and G. Trankle and G. Weimann",

year = "1993",

doi = "10.1088/0268-1242/8/4/024",

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T1 - Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

AU - Hirler, F.

AU - Strenz, R.

AU - Kuchler, R.

AU - Abstreiter, G.

AU - Bohm, G.

AU - Smoliner, J.

AU - Trankle, G.

AU - Weimann, G.

PY - 1993

Y1 - 1993

N2 - By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.

AB - By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.

UR - https://www.scopus.com/pages/publications/0027576122

U2 - 10.1088/0268-1242/8/4/024

DO - 10.1088/0268-1242/8/4/024

M3 - Article

AN - SCOPUS:0027576122

SN - 0268-1242

VL - 8

SP - 617

EP - 621

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 024

ER -

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

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