Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

K. Schmalz; I. N. Yassievich; P. Schittenhelm; G. Abstreiter

doi:10.1103/PhysRevB.60.1792

Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

K. Schmalz, I. N. Yassievich, P. Schittenhelm, G. Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The results of deep-level transient spectroscopy and admittance measurements of self-assembled Ge-rich dots are presented. The investigated quantum well (QW) Ge-rich layers in silicon consist of a thin-wetting QW layer with a width of 4-4.5 monolayers and three-dimensional dots (islands), with heights of about 6-8.5 nm and lateral dimensions of about 190-250 nm. Good agreement was observed with photoluminescence data. An enhancement of the lateral hole transport between the islands via the wetting layer due to thermally activated tunneling was observed. This effect is explained by a strong lateral electric field, which is induced by Coulomb charge of confined holes in the disc-shaped islands.

Original language	English
Pages (from-to)	1792-1798
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.60.1792
State	Published - 1999

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10.1103/PhysRevB.60.1792

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title = "Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE",

abstract = "The results of deep-level transient spectroscopy and admittance measurements of self-assembled Ge-rich dots are presented. The investigated quantum well (QW) Ge-rich layers in silicon consist of a thin-wetting QW layer with a width of 4-4.5 monolayers and three-dimensional dots (islands), with heights of about 6-8.5 nm and lateral dimensions of about 190-250 nm. Good agreement was observed with photoluminescence data. An enhancement of the lateral hole transport between the islands via the wetting layer due to thermally activated tunneling was observed. This effect is explained by a strong lateral electric field, which is induced by Coulomb charge of confined holes in the disc-shaped islands.",

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doi = "10.1103/PhysRevB.60.1792",

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AU - Schmalz, K.

AU - Yassievich, I. N.

AU - Schittenhelm, P.

AU - Abstreiter, G.

PY - 1999

Y1 - 1999

N2 - The results of deep-level transient spectroscopy and admittance measurements of self-assembled Ge-rich dots are presented. The investigated quantum well (QW) Ge-rich layers in silicon consist of a thin-wetting QW layer with a width of 4-4.5 monolayers and three-dimensional dots (islands), with heights of about 6-8.5 nm and lateral dimensions of about 190-250 nm. Good agreement was observed with photoluminescence data. An enhancement of the lateral hole transport between the islands via the wetting layer due to thermally activated tunneling was observed. This effect is explained by a strong lateral electric field, which is induced by Coulomb charge of confined holes in the disc-shaped islands.

AB - The results of deep-level transient spectroscopy and admittance measurements of self-assembled Ge-rich dots are presented. The investigated quantum well (QW) Ge-rich layers in silicon consist of a thin-wetting QW layer with a width of 4-4.5 monolayers and three-dimensional dots (islands), with heights of about 6-8.5 nm and lateral dimensions of about 190-250 nm. Good agreement was observed with photoluminescence data. An enhancement of the lateral hole transport between the islands via the wetting layer due to thermally activated tunneling was observed. This effect is explained by a strong lateral electric field, which is induced by Coulomb charge of confined holes in the disc-shaped islands.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

ER -

Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

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